SIR800DP-T1-GE3, Transistor: N-MOSFET
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- Код товара
- 8062919863
- Артикул
- SIR800DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Вес, г
- 0.1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 214,99 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Вес, г | 0.1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-SO-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SIR800DP-GE3 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 133 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 5.2W;69W |
| Pd - Power Dissipation: | 69 W |
| Total Gate Charge (Qg@Vgs) | 133nC@10V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Input Capacitance (Ciss@Vds) | 5.125nF@10V |
| Continuous Drain Current (Id) | 50A |
| Id - Continuous Drain Current: | 50 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 2.3 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |