SIR180DP-T1-RE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017685370
- Артикул
- SIR180DP-T1-RE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series
- TrenchFETВ® Gen IV
- FET Type
- N-Channel
- Packaging
- Digi-ReelВ®
Цена по запросу
(от 234,29 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 60 В, 60 А, POWERPAK SO; Полярность транзистора: N-канальный; Постоянный ток стока Id: 60 А; Напряжение источника стока Vds: 60 В; Сопротивление включения Rds(on): 0,0017 Ом; Тестовое напряжение Rds(on) Vgs:10 В; Пороговое напряжение Vgs:3,6 В
Технические параметры
| Brand: | Vishay/Siliconix |
| Series | TrenchFETВ® Gen IV |
| FET Type | N-Channel |
| Packaging | Digi-ReelВ® |
| Vgs (Max) | В±20V |
| Fall Time: | 7 ns |
| Rise Time: | 8 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 0.1 |
| Part Status | Active |
| Technology: | Si |
| Manufacturer | Vishay Siliconix |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | PowerPAK-SO-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | PowerPAKВ® SO-8 |
| Mounting Style: | SMD/SMT |
| Standard Package | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 87 nC |
| Vgs(th) (Max) @ Id | 3.6V @ 250ВµA |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 2.05 mOhm @ 10A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 83.3 W |
| Power Dissipation (Max) | 5.4W(Ta), 83.3W(Tc) |
| Supplier Device Package | PowerPAKВ® SO-8 |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 17 ns |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Typical Turn-Off Delay Time: | 31 ns |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 35 S |
| Rds On - Drain-Source Resistance: | 2.05 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 4030pF @ 30V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Current - Continuous Drain (Id) @ 25В°C | 32.4A(Ta), 60A(Tc) |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |