SIR150DP-T1-RE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070142811
- Артикул
- SIR150DP-T1-RE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Type
- Power MOSFET
- Brand:
- Vishay/Siliconix
- Mounting
- Surface Mount
- Polarity
- N
Цена по запросу
(от 136,22 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 45V 110A с 8-контактным разъемом PowerPak SO EP T/R
Технические параметры
| Type | Power MOSFET |
| Brand: | Vishay/Siliconix |
| Mounting | Surface Mount |
| Polarity | N |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Fall Time: | 6 ns |
| Rise Time: | 6 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Package Type | POWERPAK SO EP |
| Rad Hardened | No |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Transistor Type: | 1 N-Channel |
| Power Dissipation | 52(W) |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 46.7 nC |
| Number of Elements | 1 |
| Number of Channels: | 1 Channel |
| Drain-Source On-Volt | 45(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 65.7 W |
| Continuous Drain Current | 110(A) |
| Gate-Source Voltage (Max) | 20(V) |
| Vgs - Gate-Source Voltage: | -16 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 30 ns |
| Id - Continuous Drain Current: | 110 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 72 S |
| Rds On - Drain-Source Resistance: | 2.71 mOhms |
| Operating Temperature Classification | Military |
| Vds - Drain-Source Breakdown Voltage: | 45 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |