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SIJ494DP-T1-GE3, Transistor: N-MOSFET

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Код товара
8070127900
Артикул
SIJ494DP-T1-GE3
Бренд
VISHAY INTERTECHNOLOGY INC.
HTS
8541.29.00.95
Tab
Tab
PPAP
No
EU RoHS
Compliant
Цена по запросу
(от 165,77 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Вес, г0.001
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width4.37
Package Height1.07
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Typical Fall Time (ns)8|22
Typical Rise Time (ns)58|18
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)20.3
Typical Gate Charge @ Vgs (nC)16.1@7.5V|20.3@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11|8
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)15|12
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)36.8
Typical Input Capacitance @ Vds (pF)1070@75V
Maximum Drain Source Resistance (mOhm)23.2@10V