SIJ478DP-T1-GE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070058250
- Артикул
- SIJ478DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- Tab
- Tab
- PPAP
- No
- EU RoHS
- Compliant
Цена по запросу
(от 177,39 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.1 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Triple Source |
| Package Width | 4.37 |
| Package Height | 1.07 |
| Package Length | 4.9 |
| EDA / CAD Models | SIJ478DP-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 8 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 5000 |
| Typical Gate Charge @ 10V (nC) | 35.5 |
| Typical Gate Charge @ Vgs (nC) | 35.5@10V|22@6V|17.1@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 60 |
| Typical Input Capacitance @ Vds (pF) | 1855@40V |
| Maximum Drain Source Resistance (mOhm) | 8@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |