SIHP23N60E-GE3, MOSFETs 600V Vds 30V Vgs TO-220AB
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8023356392
- Артикул
- SIHP23N60E-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 34 ns
- Packaging:
- Tube
- Rise Time:
- 38 ns
Цена по запросу
(от 469,79 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 34 ns |
| Packaging: | Tube |
| Rise Time: | 38 ns |
| Вес, г | 1.95 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | TO-220-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Part # Aliases: | SIHP23N60E-BE3 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 63 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 1000 |
| Pd - Power Dissipation: | 227 W |
| Typical Turn-On Delay Time: | 22 ns |
| Typical Turn-Off Delay Time: | 66 ns |
| Id - Continuous Drain Current: | 23 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |