SIHH20N50E-T1-GE3, Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 53A; 174W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070229184
- Артикул
- SIHH20N50E-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 41 ns
- Rise Time:
- 41 ns
- Вес, г
- 1
Цена по запросу
(от 533,05 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 41 ns |
| Rise Time: | 41 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-4 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 84 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 174 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Typical Turn-On Delay Time: | 22 ns |
| Typical Turn-Off Delay Time: | 67 ns |
| Id - Continuous Drain Current: | 22 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8.4 S |
| Rds On - Drain-Source Resistance: | 128 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |