SIHG080N60E-GE3, Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070169831
- Артикул
- SIHG080N60E-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Series
- E Series
- Pin Count
- 3
- Fall Time:
- 31 ns
Цена по запросу
(от 690 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы серии Vishay E снижают потери при переключении и проводимости. Низкий коэффициент полезного действия (FOM) Ron x Qg
Технические параметры
| Brand: | Vishay/Siliconix |
| Series | E Series |
| Pin Count | 3 |
| Fall Time: | 31 ns |
| Packaging: | Tube |
| Rise Time: | 96 ns |
| Вес, г | 5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-247AC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AC-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 227 W |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 31 ns |
| Maximum Drain Source Voltage | 650 V |
| Typical Turn-Off Delay Time: | 37 ns |
| Id - Continuous Drain Current: | 35 A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 4.6 S |
| Maximum Drain Source Resistance | 0.08 Ω |
| Maximum Continuous Drain Current | 35 A |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |