N-Channel MOSFET, 29 A, 600 V, 3-PIn D2PAK VIshay SIHB30N60E-GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063882462
- Артикул
- SIHB30N60E-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 9.65mm
- Brand:
- Vishay Semiconductors
- Series
- E Series
- Series:
- E
Цена по запросу
(от 789,39 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Силовые МОП-транзисторы серии E от Vishay - это высоковольтные транзисторы со сверxнизким максимальным сопротивлением при включении, низким коэффициентом полезного действия и быстрым переключением.
Технические параметры
| Width | 9.65mm |
| Brand: | Vishay Semiconductors |
| Series | E Series |
| Series: | E |
| Pin Count | 3 |
| Fall Time: | 36 ns |
| Packaging: | Tube |
| Rise Time: | 32 ns |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | D2PAK(TO-263) |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 85 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 250 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 250 W |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 19 ns |
| Maximum Drain Source Voltage | 600 V |
| Typical Turn-Off Delay Time: | 63 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 29 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 125 mΩ |
| Maximum Continuous Drain Current | 29 A |
| Rds On - Drain-Source Resistance: | 125 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |