SIDR610EP-T1-RE3, 200V 31.9m @10V,10A 2V 1 N-Channel MOSFETs ROHS
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- Код товара
- 8070139628
- Артикул
- SIDR610EP-T1-RE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay
- Fall Time:
- 48 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 54 ns
Цена по запросу
(от 418,86 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay |
| Fall Time: | 48 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 54 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Vishay |
| Product Type: | MOSFETs |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 20 nC |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 7.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 18 ns |
| Id - Continuous Drain Current: | 8.9 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 334 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |