SIB441EDK-T1-GE3, Transistor: P-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8041298897
- Артикул
- SIB441EDK-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- COMPONENTS
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 44,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | COMPONENTS |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.1 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| Package Width | 1.6 |
| Package Height | 0.75(Max) |
| Package Length | 1.6 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-75 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Typical Fall Time (ns) | 50|52 |
| Typical Rise Time (ns) | 42|10 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2400 |
| Typical Gate Charge @ Vgs (nC) | 22.1@8V|13.4@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 22|7 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 60 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9 |
| Typical Input Capacitance @ Vds (pF) | 1180@6V |
| Maximum Drain Source Resistance (MOhm) | 25.5@4.5V |
| Maximum Gate Source Leakage Current (nA) | 4000 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |