SiA906EDJ-T1-GE3, Транзистор
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- Код товара
- 8062694625
- Артикул
- SiA906EDJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SIA
- Fall Time:
- 12 ns
- Rise Time:
- 18 ns
Цена по запросу
(от 33 ₽)
Минимальный заказ: 50 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
SiA906EDJ-T1-GE3 Vishay Транзистор
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SIA |
| Fall Time: | 12 ns |
| Rise Time: | 18 ns |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-6 |
| Part # Aliases: | SIA906EDJ-GE3 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 950 pC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Power Dissipation (Pd) | 7.8W |
| Pd - Power Dissipation: | 7.8 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 12 ns |
| Continuous Drain Current (Id) | 4.5A |
| Id - Continuous Drain Current: | 4.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 14 S |
| Rds On - Drain-Source Resistance: | 46 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |