SIA462DJ-T1-GE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070052086
- Артикул
- SIA462DJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 2.15mm
- Brand:
- Vishay/Siliconix
- Series:
- SIA
- Pin Count
- 6
Цена по запросу
(от 48,81 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Width | 2.15mm |
| Brand: | Vishay/Siliconix |
| Series: | SIA |
| Pin Count | 6 |
| Tradename: | TrenchFET |
| Вес, г | 0.1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-363 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-6 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 19 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 19 W |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |