SIA436DJ-T1-GE3, Trans MOSFET N-CH 8V 12A 6-Pin PowerPAK SC-70 EP T/R
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- Код товара
- 8001002121
- Артикул
- SIA436DJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SIA
Цена по запросу
(от 61 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 8V 12A 6-контактный PowerPak SC-70 EP T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SIA |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 8 ns |
| Lead Shape | No Lead |
| Rise Time: | 10 ns |
| Tradename: | TrenchFET, PowerPAK |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-6 |
| Part # Aliases: | SIA436DJ-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 EP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Process Technology | TrenchFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 10 |
| Особенности | - |
| Pd - Power Dissipation: | 19 W |
| Vgs - Gate-Source Voltage: | -5 V, +5 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 11 ns |
| Typical Turn-Off Delay Time: | 30 ns |
| Maximum Gate Resistance (Ohm) | 5 |
| Minimum Gate Resistance (Ohm) | 0.5 |
| Id - Continuous Drain Current: | 12 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 16.8@5V|15@4.5V |
| Forward Transconductance - Min: | 70 S |
| Maximum Gate Source Voltage (V) | ±5 |
| Typical Output Capacitance (pF) | 535 |
| Typical Turn-On Delay Time (ns) | 11 |
| Maximum Drain Source Voltage (V) | 8 |
| Typical Gate Plateau Voltage (V) | 0.9 |
| Typical Turn-Off Delay Time (ns) | 30 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 9.4 mOhms |
| Typical Diode Forward Voltage (V) | 0.73 |
| Typical Gate to Drain Charge (nC) | 0.9 |
| Maximum Gate Threshold Voltage (V) | 0.8 |
| Minimum Gate Threshold Voltage (V) | 0.35 |
| Typical Gate to Source Charge (nC) | 1.7 |
| Typical Reverse Recovery Time (ns) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1508@4V |
| Typical Reverse Recovery Charge (nC) | 1 |
| Vds - Drain-Source Breakdown Voltage: | 8 V |
| Maximum Drain Source Resistance (mOhm) | 9.4@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 350 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 5 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 321@4V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 12 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 80 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 8 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |