SIA400EDJ-T1-GE3, Transistor: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017629378
- Артикул
- SIA400EDJ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 171 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 12A 6-контактный PowerPak SC-70 EP T/R
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.04 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Standard Package Name | PowerPAK |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 23 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 6.6 |
| Minimum Gate Resistance (Ohm) | 0.6 |
| Maximum Power Dissipation (mW) | 3500 |
| Typical Gate Charge @ 10V (nC) | 24 |
| Typical Gate Charge @ Vgs (nC) | 24 10V|11.6 4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 132 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 2.2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate to Source Charge (nC) | 2.9 |
| Typical Reverse Recovery Time (ns) | 15 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 12 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1265 15V |
| Typical Reverse Recovery Charge (nC) | 7 |
| Maximum Drain Source Resistance (mOhm) | 19 4.5V |
| Maximum Gate Source Leakage Current (nA) | 15000 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 80 15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 11 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 80 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 12.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |