SI8802DB-T2-E1, MicroFoot-4 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070182722
- Артикул
- SI8802DB-T2-E1
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Series
- TrenchFET
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 47,34 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 8V 3A с 4-контактным разъемом Micro Foot T/R
Технические параметры
| PPAP | No |
| Series | TrenchFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Вес, г | 0.03 |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | MICRO FOOT |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | Micro Foot |
| Standard Package Name | BGA |
| Power Dissipation (Pd) | 500mW |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 15 |
| Total Gate Charge (Qg@Vgs) | 6.5nC@4.5V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 8 V |
| Continuous Drain Current (Id) | 3A |
| Maximum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 4.3@4.5V |
| Maximum Drain Source Resistance | 0.054 O |
| Maximum Gate Source Voltage (V) | ±5 |
| Typical Turn-On Delay Time (ns) | 5 |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Voltage (V) | 8 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3 |
| Maximum Drain Source Resistance (mOhm) | 54@4.5V |