SI7884BDP-T1-E3, SI7884BDP-T1-E3 Vishay MOSFETs Transistor N-CH 40V 58A 8-Pin PowerPAK SO EP T/R - Arrow.com
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001107605
- Артикул
- SI7884BDP-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 380 ₽)
Минимальный заказ: 81 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | N-Channel |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 14 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 1.5 |
| Maximum Power Dissipation (mW) | 4600 |
| Typical Gate Charge @ 10V (nC) | 51 |
| Typical Gate Charge @ Vgs (nC) | 51@10V|21@4.5V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 335 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 3 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 10.7 |
| Typical Reverse Recovery Time (ns) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 58 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 3540@20V |
| Typical Reverse Recovery Charge (nC) | 19 |
| Maximum Drain Source Resistance (MOhm) | 7.5@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 4.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 142@20V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 18.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 58 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |