SI7852DP-T1-GE3, 80V 7.6A 16.5mOhm@10V,10A 1.9W N Channel PowerPAK-SO-8 MOSFETs ROHS
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- Код товара
- 8066938083
- Артикул
- SI7852DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI7
- Tradename:
- TrenchFET
- Вес, г
- 0.13
Цена по запросу
(от 270 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI7 |
| Tradename: | TrenchFET |
| Вес, г | 0.13 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7852DP-GE3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 5.2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Id - Continuous Drain Current: | 12.5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 16.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |