SI7850DP-T1-GE3, Транзистор N-МОП, полевой, 60В 10,3A 4,5Вт 0,022Ом PoВтeОмPakSO8
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- Код товара
- 8055148156
- Артикул
- SI7850DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SI7
Цена по запросу
(от 195,26 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-МОП, полевой, 60В 10,3A 4,5Вт 0,022Ом PoВтeОмPakSO8
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI7 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 12 ns |
| Lead Shape | No Lead |
| Rise Time: | 10 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.22 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7850DP-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Process Technology | TrenchFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 10 |
| Pd - Power Dissipation: | 4.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 25 ns |
| Maximum Gate Resistance (Ohm) | 2.2 |
| Minimum Gate Resistance (Ohm) | 0.5 |
| Id - Continuous Drain Current: | 10.3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 4500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Forward Transconductance - Min: | 26 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 110 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3.9 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 22 mOhms |
| Typical Diode Forward Voltage (V) | 0.85 |
| Typical Gate to Drain Charge (nC) | 5.3 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 3.4 |
| Typical Reverse Recovery Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 22@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 4.5 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 10.3 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 70 |