SI7623DN-T1-GE3, Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 EP T/R
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- Код товара
- 8001059668
- Артикул
- SI7623DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant with Exemption
- Series:
- SI7
Цена по запросу
(от 120 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 35A с 8-контактным разъемом PowerPak 1212 T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant with Exemption |
| Series: | SI7 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 25 ns |
| Lead Shape | No Lead |
| Rise Time: | 38 ns |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-1212-8 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 180 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Typical Fall Time (ns) | 25|14 |
| Typical Rise Time (ns) | 38|13 |
| Особенности | - |
| Pd - Power Dissipation: | 52 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 37 ns |
| Typical Turn-Off Delay Time: | 82 ns |
| Id - Continuous Drain Current: | 35 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 117 |
| Typical Gate Charge @ Vgs (nC) | 117@10V|55.5@4.5V |
| Forward Transconductance - Min: | 70 S |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 37|14 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 82|83 |
| Rds On - Drain-Source Resistance: | 3.1 mOhms |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 35 |
| Typical Input Capacitance @ Vds (pF) | 5460@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 3.8@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 35 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |