SI7615ADN-T1-GE3, Биполярный транзистор P-канал 20В 35A 8-Pin 1212
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014686721
- Артикул
- SI7615ADN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Width
- 3.4mm
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 44,58 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -20В, -35А, Idm: -80А, 33Вт Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 3.4mm |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.12 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | PowerPAK 1212-8 |
| Корпус | PowerPAKВR 1212-8 |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | P-Channel |
| Transistor Material | Si |
| Standard Package Name | PowerPAK 1212 |
| Power Dissipation (Pd) | 3.7W;52W |
| Typical Fall Time (ns) | 26 |
| Typical Rise Time (ns) | 40 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 52 W |
| Typical Gate Charge @ Vgs | 122 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 183nC@10V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 5.59nF@10V |
| Maximum Drain Source Voltage | 20 V |
| Continuous Drain Current (Id) | 35A |
| Maximum Gate Resistance (Ohm) | 4 |
| Maximum Operating Temperature | +150 °C |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 3700 |
| Minimum Gate Threshold Voltage | 0.4V |
| Typical Gate Charge @ 10V (nC) | 122 |
| Typical Gate Charge @ Vgs (nC) | 59 4.5V|122 10V |
| Maximum Drain Source Resistance | 9.8 mΩ |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 640 |
| Typical Turn-On Delay Time (ns) | 41 |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.72 |
| Typical Gate to Drain Charge (nC) | 14.2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 9.1 |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 35 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 5590 10V |
| Typical Reverse Recovery Charge (nC) | 11 |
| Maximum Drain Source Resistance (mOhm) | 4.4 10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 80 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 655 10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 22.1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 81 |
| Пороговое напряжение на затворе | 1.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 35 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 4.4mΩ@20A, 10V |