Транзистор SI7461DP-T1-E3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062676565
- Артикул
- SI7461DP-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI7
- Fall Time:
- 90 ns
- Rise Time:
- 20 ns
Цена по запросу
(от 200 ₽)
Минимальный заказ: 1712 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET P-канальный 60В 8.6A
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI7 |
| Fall Time: | 90 ns |
| Rise Time: | 20 ns |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7461DP-E3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 121 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 5.4 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 205 ns |
| Id - Continuous Drain Current: | 14.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 31 S |
| Rds On - Drain-Source Resistance: | 14.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |