SI7450DP-T1-E3, 200V 3.2A 80mOhm@4A,10V 1.9W null PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026380931
- Артикул
- SI7450DP-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- Unknown
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SI7
Цена по запросу
(от 335,30 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 200V 3.2A с 8-контактным разъемом PowerPak SO EP T/R
Технические параметры
| PPAP | Unknown |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI7 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Unknown |
| Lead Shape | No Lead |
| Tradename: | TrenchFET |
| Вес, г | 0.51 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | SO-8 |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7450DP-E3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Typical Fall Time (ns) | 25 |
| Typical Rise Time (ns) | 20 |
| Особенности | - |
| Pd - Power Dissipation: | 5.2 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 1.5 |
| Minimum Gate Resistance (Ohm) | 0.2 |
| Id - Continuous Drain Current: | 5.3 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 5200 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 75 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Gate Plateau Voltage (V) | 4.7 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Rds On - Drain-Source Resistance: | 80 mOhms |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Gate to Drain Charge (nC) | 12 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 7.5 |
| Typical Reverse Recovery Time (ns) | 70 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Maximum Drain Source Resistance (mOhm) | 80@10V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 40 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 5.2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.3 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 80мОм |