SI7415DN-T1-E3, MOSFET транзистор
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017534002
- Артикул
- SI7415DN-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- Series:
- SI7
- Mounting
- Surface Mount
Цена по запросу
(от 202,32 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 60V 3.6A с 8-контактным разъемом PowerPak 1212 T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| Series: | SI7 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Tradename: | TrenchFET |
| Вес, г | 0.17 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerPAK-1212-8 |
| Part # Aliases: | SI7415DN-E3 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | PowerPAK 1212 |
| Power Dissipation (Pd) | 1.5W |
| Typical Fall Time (ns) | 16 |
| Typical Rise Time (ns) | 12 |
| Особенности | - |
| Pd - Power Dissipation: | 3.8 W |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Continuous Drain Current (Id) | 3.6A |
| Id - Continuous Drain Current: | 5.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 15 |
| Typical Gate Charge @ Vgs (nC) | 15@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.6 |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 65@10V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 65mΩ@5.7A, 10V |