Транзистор полевой SI7308DN-T1-GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060431786
- Артикул
- SI7308DN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Fall Time:
- 10 ns
- Rise Time:
- 65 ns
- Вес, г
- 1
Цена по запросу
(от 830 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 60-вольтовый (D-S) МОП-транзистор
Технические параметры
| Brand: | Vishay Semiconductors |
| Fall Time: | 10 ns |
| Rise Time: | 65 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-1212-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI7308DN-GE3 |
| Transistor Type: | 1 N Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 19.8 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 15 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 15 S |
| Rds On - Drain-Source Resistance: | 58 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |