SI7308DN-T1-E3, 60V 6A 58mOhm@10V,5.4A 19.8W 3V@250uA N Channel PowerPAK1212-8 MOSFETs ROHS
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- Код товара
- 8062952421
- Артикул
- SI7308DN-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay Semiconductors
- Series:
- SI7
- Tradename:
- TrenchFET
- Вес, г
- 0.18
Цена по запросу
(от 260 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay Semiconductors |
| Series: | SI7 |
| Tradename: | TrenchFET |
| Вес, г | 0.18 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | PowerPAK-1212-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI7308DN-E3 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Power Dissipation (Pd) | 3.2W;19.8W |
| Pd - Power Dissipation: | 19.8 W |
| Total Gate Charge (Qg@Vgs) | 20nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Input Capacitance (Ciss@Vds) | 665pF@15V |
| Continuous Drain Current (Id) | 6A |
| Id - Continuous Drain Current: | 6 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 58 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |