SI7149DP-T1-GE3, Транзистор: P-MOSFET; полевой; -30В; -50А; Idm: -70А; 44,4Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017566042
- Артикул
- SI7149DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand
- Vishay/Siliconix
- Series
- SI7
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 95,68 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 30V 50A с 8-контактным разъемом PowerPak SO EP T/R
Технические параметры
| PPAP | No |
| Brand | Vishay/Siliconix |
| Series | SI7 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 16 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 8 |
| Rise Time | 14 ns |
| Tradename | TrenchFET |
| Automotive | No |
| Technology | Si |
| Вес, г | 0.26 |
| PCB changed | 8 |
| Part Status | NRND |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Vishay |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | PowerPAK-SO-8 |
| Part # Aliases | SI7149DP-GE3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 98 nC |
| Supplier Package | PowerPAK SO EP |
| Number Of Channels | 1 Channel |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Transistor Polarity | P-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 69 W |
| Typical Fall Time (ns) | 16|36 |
| Typical Rise Time (ns) | 14|135 |
| Особенности | - |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 15 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 58 ns |
| Id - Continuous Drain Current | 50 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 47 S |
| Maximum Power Dissipation (mW) | 5200 |
| Typical Gate Charge @ 10V (nC) | 98 |
| Typical Gate Charge @ Vgs (nC) | 98@10V|51@4.5V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 15|79 |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 5.2 mOhms |
| Typical Turn-Off Delay Time (ns) | 52|58 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 4590@15V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Maximum Drain Source Resistance (mOhm) | 5.2@10V |
| Vgs Th - Gate-Source Threshold Voltage | 1.2 V |
| Максимальное напряжение сток-исток Uси,В | 44.4 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 50 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 44.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |