SI7141DP-T1-GE3, 20V 60A 1.9mOhm@25A,10V 2.3V@250uA P Channel 14300pF@10V 400nC@10V -55°C~+150°C@(Tj) PowerPAK-SO-8 MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070058212
- Артикул
- SI7141DP-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- SVHC
- Yes
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 284,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 20V 42.7A с 8-контактным разъемом PowerPak SO EP T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.14 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO EP |
| Process Technology | TrenchFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 55 |
| Typical Rise Time (ns) | 120 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ 10V (nC) | 265 |
| Typical Gate Charge @ Vgs (nC) | 128@4.5V|265@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 130 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 100 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 42.7 |
| Typical Input Capacitance @ Vds (pF) | 14300@10V |
| Maximum Drain Source Resistance (mOhm) | 1.9@10V |