SI7121ADN-T1-GE3, Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8060464453
- Артикул
- SI7121ADN-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- PPAP
- No
- EU RoHS
- Compliant with Exemption
- Mounting
- Surface Mount
Цена по запросу
(от 116 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
P-канальный МОП-транзистор PowerPak-1212-8 для поверxностного монтажа Vishay - это продукт нового поколения с напряжением сток-исток 30 В и максимальным напряжением затвор-исток 25 В.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Вес, г | 0.127 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.05 |
| Package Height | 1.07(Max) |
| Package Length | 3.05 |
| EDA / CAD Models | SI7121ADN-T1-GE3 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK 1212 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 34 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3500 |
| Typical Gate Charge @ 10V (nC) | 33 |
| Typical Gate Charge @ Vgs (nC) | 33@10V|16@4.5V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 38 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 24 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -50 |
| Maximum Continuous Drain Current (A) | 12 |
| Typical Input Capacitance @ Vds (pF) | 1870@15V |
| Maximum Drain Source Resistance (MOhm) | 15@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |