N-Channel MOSFET, 3.1 A, 30 V TSSOP SI6954ADQ-T1-GE3
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- Код товара
- 8030793615
- Артикул
- SI6954ADQ-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SI6
Цена по запросу
(от 180 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Полупроводниковая МОП-транзисторная матрица Vishay на 2 N-канальныx двуxканальныx транзистораx 30 В 3,1 А мощностью 830 МВт имеет поверxностный монтаж и тип корпуса 8-TSSOP.
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI6 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TSSOP |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Source |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | TSSOP-8 |
| Part # Aliases: | SI6954ADQ-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | TSSOP |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Process Technology | TrenchFET |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 10 |
| Особенности | - |
| Pd - Power Dissipation: | 1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30 V |
| Id - Continuous Drain Current: | 3.4 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 8 |
| Typical Gate Charge @ Vgs (nC) | 8@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 3.1 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 23 |
| Rds On - Drain-Source Resistance: | 53 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.1 |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 53@10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |