SI5419DU-T1-GE3, 30V 12A 20mOhm@10V,6.6A 31W 2.5V@250uA P Channel PowerPAK MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017601454
- Артикул
- SI5419DU-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Width
- 1.98mm
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 61,75 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный МОП-транзистор P-CH 30V 9.9A с 8-контактным разъемом PowerPak ChipFET T/R
Технические параметры
| PPAP | No |
| Width | 1.98mm |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 0.4 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | PowerPAK ChipFET |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK ChipFET |
| Process Technology | TrenchFET |
| Структура | P-Channel |
| Transistor Material | Si |
| Standard Package Name | Chip FET |
| Power Dissipation (Pd) | 3.1W;31W |
| Typical Fall Time (ns) | 16|12 |
| Typical Rise Time (ns) | 33|10 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 31 W |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 1.4nF@15V |
| Maximum Drain Source Voltage | 30 V |
| Continuous Drain Current (Id) | 12A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 3100 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 30 |
| Typical Gate Charge @ Vgs (nC) | 15.5@4.5V|30@10V |
| Maximum Drain Source Resistance | 33 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 47|10 |
| Maximum Continuous Drain Current | 9.9 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 30|40 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.9 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1400@15V |
| Maximum Drain Source Resistance (mOhm) | 20@10V |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 31 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 20mΩ@10V, 6.6A |