SI4931DY-T1-GE3, MOSFETs -12V Vds 8V Vgs SO-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048190679
- Артикул
- SI4931DY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SI4
Цена по запросу
(от 150 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 12V 6.7A с 8-контактным разъемом SOIC N T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 155 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 46 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.2 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Корпус | SO-8 |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4931DY-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Transistor Type: | 2 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SO |
| Power Dissipation (Pd) | 1.1W |
| Typical Fall Time (ns) | 155 |
| Typical Rise Time (ns) | 46 |
| Особенности | - |
| Pd - Power Dissipation: | 2 W |
| Total Gate Charge (Qg@Vgs) | 52nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 25 ns |
| Typical Turn-Off Delay Time: | 230 ns |
| Continuous Drain Current (Id) | 6.7A |
| Id - Continuous Drain Current: | 8.9 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 34.5@4.5V |
| Forward Transconductance - Min: | 26 S |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 25 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Gate Plateau Voltage (V) | 1.5 |
| Typical Turn-Off Delay Time (ns) | 230 |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Typical Gate to Drain Charge (nC) | 9.6 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 5.1 |
| Typical Reverse Recovery Time (ns) | 128 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Maximum Drain Source Resistance (mOhm) | 18@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 30 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2000 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 6.7 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.1 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |