SI4848BDY-T1-GE3, Vishay N-Kanal, SMD MOSFET 150 V / 5 A, 8-Pin SO-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8063905842
- Артикул
- SI4848BDY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 32 ns
- Packaging:
- Reel, Cut Tape
- Rise Time:
- 8 ns
Цена по запросу
(от 59 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 32 ns |
| Packaging: | Reel, Cut Tape |
| Rise Time: | 8 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | SO-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 6 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 4.5 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 10 ns |
| Typical Turn-Off Delay Time: | 15 ns |
| Id - Continuous Drain Current: | 3.8 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 5 S |
| Rds On - Drain-Source Resistance: | 89 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |