SI4835DDY-T1-E3, Транзистор P-MOSFET, полевой, -30В, -7,7А, 5,6Вт, SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062217832
- Артикул
- SI4835DDY-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 87 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор -30V Vds 25V Vgs SO-8
Технические параметры
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.17 |
| Серия | SI4 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Технология | Si |
| Standard Package Name | SO |
| Вид монтажа | SMD/SMT |
| Typical Fall Time (ns) | 9|15 |
| Typical Rise Time (ns) | 13|100 |
| Тип продукта | MOSFET |
| Подкатегория | MOSFETs |
| Number of Elements per Chip | 1 |
| Торговая марка | Vishay / Siliconix |
| Упаковка / блок | SO-8 |
| Maximum Gate Resistance (Ohm) | 2.5 |
| Minimum Gate Resistance (Ohm) | 0.3 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 43 |
| Typical Gate Charge @ Vgs (nC) | 43@10V|22@4.5V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Output Capacitance (pF) | 380 |
| Typical Turn-On Delay Time (ns) | 11|44 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 32|28 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.75 |
| Typical Gate to Drain Charge (nC) | 11 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 6 |
| Typical Reverse Recovery Time (ns) | 28 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Категория продукта | МОП-транзистор |
| Maximum Continuous Drain Current (A) | 13 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1960@15V |
| Typical Reverse Recovery Charge (nC) | 20 |
| Maximum Drain Source Resistance (mOhm) | 18@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Другие названия товара № | SI4835DDY-E3 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 325@15V |
| Коммерческое обозначение | TrenchFET |
| Размер фабричной упаковки | 2500 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 8.7 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |