SI4559ADY-T1-E3, Trans MOSFET N/P-CH 60V 5.3A/3.9A 8-Pin SOIC N T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001007690
- Артикул
- SI4559ADY-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant
- Series:
- SI4
Цена по запросу
(от 49 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N/P-CH 60V 4.3A/3A с 8-контактным разъемом SOIC N T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant |
| Series: | SI4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 10 ns, 30 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 65 ns, 70 ns |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4559ADY-E3 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC, 22 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 10@N Channel|30@P Channel |
| Typical Rise Time (ns) | 65|15@N Channel|70|13@P Channel |
| Особенности | комплементарная пара транзисторов |
| Pd - Power Dissipation: | 3.1 W, 3.4 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 15 ns, 30 ns |
| Typical Turn-Off Delay Time: | 15 ns, 40 ns |
| Id - Continuous Drain Current: | 5.3 A, 3.9 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 13@N Channel|14.5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel |
| Forward Transconductance - Min: | 15 S, 8.5 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 15|10@N Channel|30|10@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 15|20@N Channel|40|35@P Channel |
| Rds On - Drain-Source Resistance: | 58 mOhms, 120 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.3@N Channel|3@P Channel |
| Typical Input Capacitance @ Vds (pF) | 650@15V@P Channel|665@15V@N Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 58@10V@N Channel|120@10V@P Channel |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 5.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |