SI4459ADY-T1-GE3, Транзистор P-MOSFET, полевой, -30В, -23,5А, 5Вт, SO8
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- Код товара
- 8017542568
- Артикул
- SI4459ADY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant with Exemption
- Series:
- SI4
Цена по запросу
(от 390 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -30В, -23,5А, 5Вт, SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant with Exemption |
| Series: | SI4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 20 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 16 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.15 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4459ADY-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 129 nC |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 20|40 |
| Typical Rise Time (ns) | 16|130 |
| Особенности | - |
| Pd - Power Dissipation: | 7.8 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 16 ns |
| Typical Turn-Off Delay Time: | 80 ns |
| Id - Continuous Drain Current: | 29 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 129 |
| Typical Gate Charge @ Vgs (nC) | 129 10V|61 4.5V |
| Forward Transconductance - Min: | 24 S |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 860 |
| Typical Turn-On Delay Time (ns) | 16|75 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 80|60 |
| Rds On - Drain-Source Resistance: | 5 mOhms |
| Typical Gate to Drain Charge (nC) | 23.5 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 16.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 29 |
| Typical Input Capacitance @ Vds (pF) | 6000 15V |
| Typical Reverse Recovery Charge (nC) | 74 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 5 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 5 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 23.5 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |