SI4442DY-T1-E3, Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001286226
- Артикул
- SI4442DY-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Brand:
- Vishay Semiconductors
- EU RoHS
- Compliant with Exemption
- Series:
- SI4
Цена по запросу
(от 350 ₽)
Минимальный заказ: 90 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзисторный MOSFET N-CH 30V 15A 8-контактный SOIC N T/R
Технические параметры
| PPAP | No |
| Brand: | Vishay Semiconductors |
| EU RoHS | Compliant with Exemption |
| Series: | SI4 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Tradename: | TrenchFET |
| Вес, г | 0.51 |
| PCB changed | 8 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Manufacturer: | Vishay |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4442DY-E3 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 50 nC |
| Process Technology | TrenchFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 47 |
| Typical Rise Time (ns) | 11 |
| Особенности | - |
| Pd - Power Dissipation: | 3.5 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Id - Continuous Drain Current: | 22 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 36@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 125 |
| Rds On - Drain-Source Resistance: | 4.5 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 15 |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 4.5@10V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 15 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |