SI4431CDY-T1-GE3, Транзистор: P-MOSFET, полевой, -30В, -7,2А, Idm: -30А, 2,7Вт, SO8
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- Код товара
- 8017546358
- Артикул
- SI4431CDY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Width
- 4mm
- Brand:
- Vishay Semiconductors
- Series:
- SI4
- Pin Count
- 8
Цена по запросу
(от 54,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -7,2А, Idm: -30А, 2,7Вт, SO8 Характеристики Категория Диод Тип защитный
Технические параметры
| Width | 4mm |
| Brand: | Vishay Semiconductors |
| Series: | SI4 |
| Pin Count | 8 |
| Fall Time: | 9 ns |
| Rise Time: | 13 ns |
| Tradename: | TrenchFET |
| Вес, г | 0.12 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI4431CDY-GE3 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P Channel |
| Transistor Polarity: | P-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 4.2 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 4.2 W |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Vgs - Gate-Source Voltage | 2.5V @ 250uA |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 23 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 18 S |
| Maximum Drain Source Resistance | 49 mΩ |
| Maximum Continuous Drain Current | 7.2 A |
| Rds On - Drain-Source Resistance | 32mО© @ 7A,10V |
| Rds On - Drain-Source Resistance: | 32 mOhms |
| Power Dissipation-Max (Ta=25В°C) | 4.2W(Tc) |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Continuous Drain Current (Id) @ 25В°C | 9A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 2.7 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |