SI4425DDY-T1-GE3, Транзистор: P-MOSFET, полевой, -30В, -15,7А, 3,6Вт, SO8
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- Код товара
- 8017543868
- Артикул
- SI4425DDY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Series
- TrenchFET
- Mounting
- Surface Mount
- ECCN (US)
- EAR99
Цена по запросу
(от 125,53 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: P-MOSFET, полевой, -30В, -15,7А, 3,6Вт, SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Series | TrenchFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.13 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SO-8 |
| Корпус | SO-8 |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 15|9 |
| Typical Rise Time (ns) | 41|9 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Resistance (Ohm) | 4.2 |
| Minimum Gate Resistance (Ohm) | 0.4 |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 53 |
| Typical Gate Charge @ Vgs (nC) | 53@10V|27@4.5V |
| Maximum Drain Source Resistance | 0.0165 O |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 460 |
| Typical Turn-On Delay Time (ns) | 52|12 |
| Maximum Continuous Drain Current | 19.7 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.2 |
| Typical Turn-Off Delay Time (ns) | 36|42 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 13 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Gate to Source Charge (nC) | 8 |
| Typical Reverse Recovery Time (ns) | 20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 19.7 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 2610@15V |
| Typical Reverse Recovery Charge (nC) | 10 |
| Maximum Drain Source Resistance (mOhm) | 9.8@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 50 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 13.7@4.5V|8.1@10V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 395@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 85 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 3.6 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 15.7 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.6 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |