SI4403DDY-T1-GE3, Транзистор P-MOSFET, полевой, -20В, -12,3А, 3,2Вт, SO8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070073830
- Артикул
- SI4403DDY-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SO8
- Brand:
- Vishay/Siliconix
- Mounting
- SMD
- Fall Time:
- 24 ns
Цена по запросу
(от 68,20 ₽)
Минимальный заказ: 100 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Case | SO8 |
| Brand: | Vishay/Siliconix |
| Mounting | SMD |
| Fall Time: | 24 ns |
| Rise Time: | 25 ns |
| Вес, г | 0.2 |
| Gate charge | 39nC |
| Technology: | Si |
| Manufacturer | VISHAY |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | -12.3A |
| Manufacturer: | Vishay |
| Package/Case: | SOIC-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Power dissipation | 3.2W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 66 nC |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±8V |
| Number of Channels: | 1 Channel |
| On-state resistance | 14mΩ |
| Drain-source voltage | -20V |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation: | 5 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 21 ns |
| Typical Turn-Off Delay Time: | 70 ns |
| Id - Continuous Drain Current: | 15.4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 45 S |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |