P-Channel MOSFET, 7.9 A, 20 V TSOP-6 SI3460DDV-T1-GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030793598
- Артикул
- SI3460DDV-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- TSOP6
- PPAP
- No
- Brand:
- Vishay Semiconductors
- Series:
- SI3
Цена по запросу
(от 68,85 ₽)
Минимальный заказ: 25 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный полупроводниковый прибор Vishay Semiconductor 20 В 7,9 А (Tc), 1,7 Вт (Ta), 2,7 Вт (Tc) для поверxностного монтажа 6-TSOP не содержит галогенов в соответствии с определением IEC 61249-2-21.
Технические параметры
| Case | TSOP6 |
| PPAP | No |
| Brand: | Vishay Semiconductors |
| Series: | SI3 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 8 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 12 ns |
| Technology | TrenchFET® |
| Tradename: | TrenchFET |
| Вес, г | 1 |
| Gate charge | 18nC |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | VISHAY |
| Package Type | TSOP-6 |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain |
| Drain current | 7.9A |
| Manufacturer: | Vishay |
| Mounting Type | Surface Mount |
| Package/Case: | TSOP-6 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI3460DDV-T1-BE3 SI3460DDV-GE3 |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 1.7W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Структура | P-Channel |
| Gate-source voltage | ±8V |
| Number of Channels: | 1 Channel |
| On-state resistance | 28mΩ |
| Drain-source voltage | 20V |
| Pulsed drain current | 20A |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 11|12 |
| Особенности | - |
| Pd - Power Dissipation: | 2.7 W |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 21 ns |
| Id - Continuous Drain Current: | 7.9 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1700 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 12@8V|6.7@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 6|5 |
| Maximum Continuous Drain Current | 7.9 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 21|19 |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.9 |
| Typical Input Capacitance @ Vds (pF) | 666@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 28@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±10В |