SI3433CDV-T1-E3, MOSFETs -20V Vds 8V Vgs TSOP-6
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006241608
- Артикул
- SI3433CDV-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- PPAP
- No
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 56,93 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain |
| Package Width | 1.65 |
| Package Height | 1(Max) |
| Package Length | 3.05 |
| Product Category | Power MOSFET |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Структура | MOSFET |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 22 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Gate Charge @ Vgs (nC) | 30@8V|18@4.5V |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Output Capacitance (pF) | 210 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.6 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 4.8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Typical Gate to Source Charge (nC) | 2.1 |
| Typical Reverse Recovery Time (ns) | 45 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 1300@10V |
| Typical Reverse Recovery Charge (nC) | 40 |
| Maximum Drain Source Resistance (mOhm) | 38@4.5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Drain Source Resistance @ 25°C (mOhm) | 46@1.8V|37@2.5V|31@4.5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 180@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 110 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |