SI2377EDS-T1-GE3, Транзистор P-MOSFET, полевой, -20В, -3,5А, 1,1Вт, SOT23
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- Код товара
- 8070098754
- Артикул
- SI2377EDS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- Case
- SOT23
- PPAP
- No
- Width
- 1.4mm
Цена по запросу
(от 59,32 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.29.00.95 |
| Case | SOT23 |
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Mounting | SMD |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| Gate charge | 7.6nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | VISHAY |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Configuration | Single |
| Drain current | -3.5A |
| Mounting Type | Surface Mount |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Power dissipation | 1.1W |
| Process Technology | TrenchFET |
| Type of transistor | P-MOSFET |
| Gate-source voltage | ±8V |
| On-state resistance | 61mΩ |
| Transistor Material | Si |
| Drain-source voltage | -20V |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 2300|2000 |
| Typical Rise Time (ns) | 400|1000 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.8 W |
| Typical Gate Charge @ Vgs | 14 nC @ 8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1250 |
| Minimum Gate Threshold Voltage | 0.4V |
| Typical Gate Charge @ Vgs (nC) | 7.6@4.5V|14@8V |
| Maximum Drain Source Resistance | 165 mΩ |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 90|200 |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 5200|4000 |
| Features of semiconductor devices | ESD protected gate |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.4 |
| Maximum Drain Source Resistance (mOhm) | 61@4.5V |