SI2366DS-T1-GE3, MOSFETs 30V Vds 20V Vgs SOT-23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004641775
- Артикул
- SI2366DS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SOT23
- PPAP
- No
- Width
- 1.4mm
- EU RoHS
- Compliant
Цена по запросу
(от 52,81 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 5.8A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| Case | SOT23 |
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.35 |
| Gate charge | 10nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Корпус | SOT-23 |
| Configuration | Single |
| Drain current | 5.8A |
| Mounting Type | Surface Mount |
| Kind of channel | enhancement |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 1.3W |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| On-state resistance | 36mΩ |
| Transistor Material | Si |
| Drain-source voltage | 30V |
| Pulsed drain current | 20A |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 48 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.1 W |
| Typical Gate Charge @ Vgs | 6.4 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1250 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 6.4 |
| Typical Gate Charge @ Vgs (nC) | 6.4@10V|3.2@4.5V |
| Maximum Drain Source Resistance | 42 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 32 |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate Threshold Voltage (V) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.8 |
| Typical Input Capacitance @ Vds (pF) | 335@15V |
| Maximum Drain Source Resistance (mOhm) | 36@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 5.8(Tc) |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |