SI2366DS-T1-BE3, MOSFETs SOT23 N-CH 30V 4.5A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070174723
- Артикул
- SI2366DS-T1-BE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Brand:
- Vishay/Siliconix
- Fall Time:
- 8 ns
- Rise Time:
- 12 ns
- Вес, г
- 0.01
Цена по запросу
(от 52,17 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Vishay/Siliconix |
| Fall Time: | 8 ns |
| Rise Time: | 12 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Vishay |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI2366DS-T1-GE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.2 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 2.1 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 5 ns |
| Typical Turn-Off Delay Time: | 14 ns |
| Id - Continuous Drain Current: | 5.8 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |