SI2356DS-T1-GE3, Транзистор MOSFET SOT23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8067055208
- Артикул
- SI2356DS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- V(DS)
- 40 V
- Brand:
- Vishay Semiconductors
- P(tot)
- 1.7 W
- Package
- SOT-23
Цена по запросу
(от 20 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор MOSFET SOT23
Технические параметры
| V(DS) | 40 V |
| Brand: | Vishay Semiconductors |
| P(tot) | 1.7 W |
| Package | SOT-23 |
| Packaging | REEL |
| Automotive | NO |
| Fall Time: | 6 ns |
| Rise Time: | 12 ns |
| Вес, г | 0.04 |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | N-CH |
| Manufacturer: | Vishay |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| RDS(on)at 10V | 42 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| I(D)at Tc=25°C | 4.3 A |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SI2356DS-T1-BE3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.8 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 1.7 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 13 ns |
| Id - Continuous Drain Current: | 4.3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 51 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |