SI2338DS-T1-GE3,Power MOSFET, N Channel, 30 V, 6 A, 0.023 ohm, SOT-23, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8798598205
- Артикул
- SI2338DS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- Case
- SOT23
- PPAP
- No
- Width
- 1.4mm
- EU RoHS
- Compliant
Цена по запросу
(от 116 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 30V 6A 3-контактный SOT-23 T/R
Технические параметры
| Case | SOT23 |
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| Gate charge | 13nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | VISHAY |
| Package Type | SOT-23 |
| Polarisation | unipolar |
| Корпус | SOT-23 |
| Configuration | Single |
| Drain current | 6A |
| Mounting Type | Surface Mount |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Power dissipation | 1.6W |
| Process Technology | TrenchFET |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| On-state resistance | 28mΩ |
| Transistor Material | Si |
| Drain-source voltage | 30V |
| Pulsed drain current | 25A |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 7|10 |
| Typical Rise Time (ns) | 20|11 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 2.5 W |
| Typical Gate Charge @ Vgs | 8.2 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1300 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 8.2 |
| Typical Gate Charge @ Vgs (nC) | 8.2@10V|4.2@4.5V |
| Maximum Drain Source Resistance | 33 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 6|3 |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 14|20 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 424@15V |
| Maximum Drain Source Resistance (mOhm) | 28@10V |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 6 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.023 Ом |