SI2325DS-T1-E3, Транзистор маломощный
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061891533
- Артикул
- SI2325DS-T1-E3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- PPAP
- No
- Width
- 1.4mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 67 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH 150V 0,53A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.04 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Transistor Material | Si |
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 750mW |
| Typical Fall Time (ns) | 11 |
| Typical Rise Time (ns) | 11 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 750 mW |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Total Gate Charge (Qg@Vgs) | 7.7nC@75V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 510pF@25V |
| Maximum Drain Source Voltage | 150 V |
| Continuous Drain Current (Id) | 0.69A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1250 |
| Minimum Gate Threshold Voltage | 2.5V |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V |
| Maximum Drain Source Resistance | 1.2 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 30 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Continuous Drain Current | 530 mA |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Gate to Drain Charge (nC) | 2.5 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.53 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 340@25V |
| Typical Reverse Recovery Charge (nC) | 90 |
| Maximum Drain Source Resistance (mOhm) | 1200@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF@25V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.6 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1250 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@25V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.53 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |