SI2321-TP, MOSFETs P-Channel Enhancement Mode Field Effect Transistor
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8006234933
- Артикул
- SI2321-TP
- Бренд
- Micro Commercial Components Corp. (MCC)
- Brand:
- Micro Commercial Components(MCC)
- Fall Time:
- 60 ns
- Rise Time:
- 55 ns
- Вес, г
- 0.01
Цена по запросу
(от 39,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Micro Commercial Components(MCC) |
| Fall Time: | 60 ns |
| Rise Time: | 55 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Micro Commercial Components(MCC) |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 13 nC |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity: | 3000 |
| Особенности | Enhancement Mode |
| Pd - Power Dissipation: | 350 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Id - Continuous Drain Current: | 2.9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 3 S |
| Rds On - Drain-Source Resistance: | 57 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |