Транзистор полевой SI2304DDS-T1-GE3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671587
- Артикул
- SI2304DDS-T1-GE3
- Бренд
- VISHAY INTERTECHNOLOGY INC.
- HTS
- 8541.29.00.95
- MSL
- MSL 1-Unlimited
- Width
- 1.4mm
- EU RoHS
- Compliant
Цена по запросу
(от 19 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный 30В 3.3А 1.7Вт
Технические параметры
| HTS | 8541.29.00.95 |
| MSL | MSL 1-Unlimited |
| Width | 1.4mm |
| EU RoHS | Compliant |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| No. of Pins | 3Pins |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.4(Max) |
| Package Height | 1.02(Max) |
| Package Length | 3.04(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Process Technology | TrenchFET |
| Transistor Material | Si |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Standard Package Name | SOT-23 |
| Transistor Case Style | TO-236 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 50 |
| Drain Source Voltage Vds | 30V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.7 W |
| Operating Temperature Max | 150°C |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Vgs - Gate-Source Voltage | 2.2V @ 250uA |
| Continuous Drain Current Id | 3.6A |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation (mW) | 1100 |
| Minimum Gate Threshold Voltage | 1.2V |
| Typical Gate Charge @ 10V (nC) | 4.5 |
| Typical Gate Charge @ Vgs (nC) | 2.1@4.5V|4.5@10V |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 60mО© @ 3.2A,10V |
| Typical Turn-Off Delay Time (ns) | 12 |
| Gate Source Threshold Voltage Max | 2.2V |
| Power Dissipation-Max (Ta=25В°C) | 1.1W |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.3 |
| Typical Input Capacitance @ Vds (pF) | 235@15V |
| Vds - Drain-Source Breakdown Voltage | 30V |
| Maximum Drain Source Resistance (mOhm) | 60@10V |
| Continuous Drain Current (Id) @ 25В°C | 3.3A |